Polarized electroluminescence from silicon nanostructures

Details Polarized electroluminescence from silicon nanostructures Polarized electroluminescence from silicon nanostructures

2011-04-26

arxiv.org/abs/1104.4975v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 7 figures

Scientific paper

We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron. The CPEL dependences on the forward current and lateral electric field show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW - {\delta}-barriers interface with the assistance of phosphorus donors.

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