Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors

Details Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors

2012-02-20

arxiv.org/abs/1202.4222v1

Physics

Condensed Matter

Materials Science

6 figured

Scientific paper

Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization-fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.

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