Polarization effects in the channel of an organic field-effect transistor

Details Polarization effects in the channel of an organic field-effect transistor Polarization effects in the channel of an organic field-effect transistor

2005-10-27

arxiv.org/abs/cond-mat/0510751v1

Physics

Condensed Matter

Other Condensed Matter

19 pages, 3 figures

Scientific paper

10.1063/1.2214363

We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge-carrier in the quasi-two dimensional channel of a pentacene transistor by a factor of two from its bulk value when the gate is a high-permittivity dielectric such as $(\textrm{Ta}_{2}\textrm{O}_{5})$ while this reduction essentially vanishes using a polymer gate-insulator. These results demonstrate that carrier mass renormalization triggers the dielectric effects on the mobility reported recently in OFETs.

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