Polariton states bound to defects in GaAs/AlAs planar microcavities

Details Polariton states bound to defects in GaAs/AlAs planar microcavities Polariton states bound to defects in GaAs/AlAs planar microcavities

2011-11-25

arxiv.org/abs/1111.6012v1

Phys. Rev. B 85, 165309 (2012)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.85.165309

We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these structures are cross-hatch misfit dislocations, and point-like defects extended over several micrometers. We attribute the latter defects to Ga droplets emitted occasionally by the Ga cell during the growth. These defects, also known as oval defects, result in a dome-like local modulation of surface, which is translated into the cavity structure and leads to a lateral modulation of the cavity polariton energy of up to 15\,meV. The resulting spatially localized potential landscape for the in-plane polariton motion creates a series of bound states. These states were characterized by spectrally resolved transmission imaging in real and reciprocal space, and reveal the spatial potential created by the defects. Interestingly, the defect states exhibit long lifetimes in the 10ps range, which we attribute to a spatially smooth confinement potential.

Affiliated with

Also associated with

No associations

Rating

Polariton states bound to defects in GaAs/AlAs planar microcavities does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Polariton states bound to defects in GaAs/AlAs planar microcavities, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polariton states bound to defects in GaAs/AlAs planar microcavities will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-174551