Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Details Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

2007-10-10

arxiv.org/abs/0710.2060v3

Phys. Rev. Lett. 100, 047401 (2008)

Physics

Condensed Matter

Materials Science

5 pages, 4 figures, accepted for publication in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.100.047401

Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

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