Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors

Details Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors

2006-06-23

arxiv.org/abs/cond-mat/0606594v2

Physics

Condensed Matter

Superconductivity

2pages, 2 figures, submitted to Physica C (Proceedings of M2S-HTSC VIII) ; Ref. 10 is revised

Scientific paper

10.1016/j.physc.2007.04.079

We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration ($P_{pl}$) or an effective three-dimentional hole-doping concentration ($P_{3D}$). We find that superconducting transition temperature ($T_c$) exhibits a universal dome-shaped behavior in the $T_c$ $vs.$ $P_{3D}$ plot with a universal optimal doping concentration at $P_{3D}$ $\sim$ 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for the single-layer high temperature superconductors.

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