Pinned Magnetic Impurity Levels in Doped Quantum Dots

Details Pinned Magnetic Impurity Levels in Doped Quantum Dots Pinned Magnetic Impurity Levels in Doped Quantum Dots

2006-08-31

arxiv.org/abs/cond-mat/0608734v1

Physics

Condensed Matter

Materials Science

18 pages, 4 figures, submitted for publication

Scientific paper

Spectroscopic data demonstrate that impurity D/A levels in doped semiconductor nanostructures are energetically pinned, resulting in variations in D/A binding energies with increasing quantum confinement. Using magnetic circular dichroism spectroscopy, the donor binding energies of Co2+ ions in colloidal ZnSe quantum dots have been measured as a function of quantum confinement and analyzed in conjunction with ab initio density functional theory calculations. The resulting experimental demonstration of pinned impurity levels in quantum dots has far-reaching implications for physical phenomena involving impurity-carrier interactions in doped semiconductor nanostructures, including in the emerging field of semiconductor spintronics where magnetic-dopant-carrier exchange interactions define the functionally relevant properties of diluted magnetic semiconductors.

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