Physics – Condensed Matter – Materials Science
Scientific paper
2001-03-23
Phys.Lett. A282 (2001) 309-318
Physics
Condensed Matter
Materials Science
LaTeX RevTeX 11 pages, 6 figures
Scientific paper
10.1016/S0375-9601(01)00202-X
A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.
Clendenin J. E.
Garwin E. L.
Kirby R. E.
Maruyama Takashi
Mulhollan G. A.
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