Physics – Condensed Matter – Materials Science
Scientific paper
2010-12-16
Solid State Commun. 151 (2011) 269-271
Physics
Condensed Matter
Materials Science
Scientific paper
10.1016/j.ssc.2010.12.020
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically-active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.
Lee Jeong-Eun
Martin James A.
Millunchick Joanna Mirecki
Saucer T. W.
Sih V.
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