Photoluminescence measurements in Be-delta-doped back-gate induced quantum well

Details Photoluminescence measurements in Be-delta-doped back-gate induced quantum well Photoluminescence measurements in Be-delta-doped back-gate induced quantum well

2004-05-24

arxiv.org/abs/cond-mat/0405552v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages

Scientific paper

10.1016/j.susc.2005.01.058

The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11} cm^{-2} by changing the back gate voltage. There is a linear increase in the acceptor PL spectrum around 1.49 eV with an increase in the back gate voltage and the PL disappears from the exciton bound to neutral donors (D^{0}X) around 1.51 eV at 1.2 X 10^{10} cm^{-2}.

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