Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states

Details Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states

2009-05-12

arxiv.org/abs/0905.1972v3

Physics

Condensed Matter

Materials Science

5 pages, 5 figures

Scientific paper

We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified.

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