Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs

Details Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs

2008-08-14

arxiv.org/abs/0808.1987v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

We report on the observation of the circular (helicity-dependent) and linear
photogalvanic effects in Si-MOSFETs with inversion channels. The developed
microscopic theory demonstrates that the circular photogalvanic effect in Si
structures it is of pure orbital nature originating from the quantum
interference of different pathways contributing to the light absorption.

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