Photoemission induced gating of topological insulator

Details Photoemission induced gating of topological insulator Photoemission induced gating of topological insulator

2010-09-24

arxiv.org/abs/1009.4855v2

Phys. Rev. B 83, 081303(R) (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

+ resistivity data and some discussion

Scientific paper

10.1103/PhysRevB.83.081303

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu intercalated Bi2Se3 shows that the surface states occupancy in this material can be tuned by changing the photon energy and understood as a photoemission induced gating effect. Our finding provides an effective tool to investigate the new physics coming from the topological surface states and suggests the intercalation as a recipe for synthesis of the material suitable for electronic applications.

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