Photoelectron Escape Depth and Inelastic Secondaries in High Temperature Superconductors

Details Photoelectron Escape Depth and Inelastic Secondaries in High Temperature Superconductors Photoelectron Escape Depth and Inelastic Secondaries in High Temperature Superconductors

1998-09-14

arxiv.org/abs/cond-mat/9809206v1

Phys. Rev. B 59, 11191 (1999)

Physics

Condensed Matter

Superconductivity

2 pages, revtex, 3 encapsulated postscript figures

Scientific paper

10.1103/PhysRevB.59.11191

We calculate the photoelectron escape depth in the high temperature superconductor Bi2212 by use of electron energy-loss spectroscopy data. We find that the escape depth is only 3 Ang. for photon energies typically used in angle resolved photoemission measurements. We then use this to estimate the number of inelastic secondaries, and find this to be quite small near the Fermi energy. This implies that the large background seen near the Fermi energy in photoemission measurements is of some other origin.

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