Phosphorus donors in highly strained silicon

Details Phosphorus donors in highly strained silicon Phosphorus donors in highly strained silicon

2006-07-27

arxiv.org/abs/cond-mat/0607737v1

Phys. Rev. Lett. 97, 166402 (2006)

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.97.166402

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si$_{1-x}$Ge$_x$ substrates with $x\leq 0.3$ is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory (DFT) shows that the additional reduction is caused by the volume increase of the unit cell and a local relaxation of the Si ligands of the P donor.

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