Phonon renormalisation in doped bilayer graphene

Details Phonon renormalisation in doped bilayer graphene Phonon renormalisation in doped bilayer graphene

2008-07-10

arxiv.org/abs/0807.1631v1

Phys. Rev. B, 79, 155417 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 figures

Scientific paper

We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This results in a change of slope in the variation of G peak position with doping, which allows a direct measurement of the interlayer coupling strength.

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