Phonon Confinement in Stressed Silicon Nanocluster

Details Phonon Confinement in Stressed Silicon Nanocluster Phonon Confinement in Stressed Silicon Nanocluster

2008-09-09

arxiv.org/abs/0809.1543v1

Physics

Condensed Matter

Materials Science

15 pages, 4 figures, Conf. edision J. Nanoscience and Nanotechnology (In Press)

Scientific paper

Confined acoustic and optical phonons in Si nanoclusters embedded in sapphire, synthesized using ion-beam implantation are investigated using Raman spectroscopy. The l = 0 and l = 2 confined acoustic phonons, found at low Raman shift, are analyzed using complex frequency model and the size of the nanoparticles are estimated as 4 and 6 nm. For the confined optical phonon, in contrast to expected red shift, the Raman line shape shows a substantial blue shift, which is attributed to size dependent compressive stress in the nanoparticles. The calculated Raman line shape for the stressed nanoparticles fits well to data. The sizes of Si nanoparticles obtained using complex frequency model are consistent with the size estimated from the fitting of confined optical phonon line shapes and those found from X-ray diffraction and TEM.

Affiliated with

Also associated with

No associations

Rating

Phonon Confinement in Stressed Silicon Nanocluster does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Phonon Confinement in Stressed Silicon Nanocluster, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phonon Confinement in Stressed Silicon Nanocluster will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-210669