Phonon-assisted tunneling in asymmetric resonant tunneling structures

Details Phonon-assisted tunneling in asymmetric resonant tunneling structures Phonon-assisted tunneling in asymmetric resonant tunneling structures

1998-10-28

arxiv.org/abs/cond-mat/9810376v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

1 paper and 5 figures

Scientific paper

Based on the dielectric continuum model, we calculated the phonon assisted tunneling (PAT) current of general double barrier resonant tunneling structures (DBRTSs) including both symmetric and antisymmetric ones. The results indicate that the four higher frequency interface phonon modes (especially the one which peaks at either interface of the emitter barrier) dominate the PAT processes, which increase the valley current and decrease the PVR of the DBRTSs. We show that an asymmetric structure can lead to improved performance.

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