Phonon-assisted tunneling in an isolated double dot system

Details Phonon-assisted tunneling in an isolated double dot system Phonon-assisted tunneling in an isolated double dot system

2005-03-22

arxiv.org/abs/cond-mat/0503559v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 12 figures, shortened text and corrected typos. 8 pages, 14 figures

Scientific paper

Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet electron wavefunctions and energies. It is found that at small doublet energies the piezoelectric rates due to flexural modes give the dominant contribution. For small slab thicknesses the predicted rates are up to two orders of magnitude higher than for very thick slabs.

Affiliated with

Also associated with

No associations

Rating

Phonon-assisted tunneling in an isolated double dot system does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Phonon-assisted tunneling in an isolated double dot system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phonon-assisted tunneling in an isolated double dot system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-134435