Physics – Condensed Matter – Materials Science
Scientific paper
2010-07-02
Pis'ma v ZhETF, 2010, vol. 92, is. 5, p. 346-350; JETP Letters, 2010, vol. 92, is. 5, 310-314
Physics
Condensed Matter
Materials Science
5 pages, 5 figures. To appear in JETP Letters (Pis'ma v ZhETF, 10 September 2010)
Scientific paper
10.1134/S0021364010170091
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO$_2$ film decomposition has been in situ investigated by reflected high energy electron diffraction (RHEED) and high resolution scanning tunnelling microscopy (STM). A transition between (2 x 1) and (4 x 4) RHEED patterns was observed. The (4 x 4) pattern arose at T <~600C during sample posttreatment cooling. The reconstruction was observed to be reversible. The c(8 x 8) structure was revealed by STM at room temperature on the same samples. The (4 x 4) patterns have been evidenced to be a manifestation of the c(8 x 8) surface structure in RHEED. The phase transition appearance has been found to depend on thermal treatment conditions and sample cooling rate.
Arapkina Larisa V.
Chizh K. V.
Shevlyuga Vladimir M.
Yuryev Vladimir A.
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