Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

Details Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

2006-06-20

arxiv.org/abs/cond-mat/0606517v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

An experimental study of the high mobility GaAs/AlGaAs system at large-$\nu$
indicates several distinct phase relations between the oscillatory diagonal-
and Hall- resistances, and suggests a new class of integral quantum Hall
effect, which is characterized by "anti-phase" Hall- and diagonal- resistance
oscillations.

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