Phase stability of hafnium oxide and zirconium oxide on silicon substrate

Details Phase stability of hafnium oxide and zirconium oxide on silicon substrate Phase stability of hafnium oxide and zirconium oxide on silicon substrate

2007-08-31

arxiv.org/abs/0708.4356v1

Scripta Materialia 57 (3): 201-204 (2007)

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1016/j.scriptamat.2007.04.011

Phase stabilities of Hf-Si-O and Zr-Si-O have been studied with first-principles and thermodynamic modeling. From the obtained thermodynamic descriptions, phase diagrams pertinent to thin film processing were calculated. We found that the relative stability of the metal silicates with respect to their binary oxides plays a critical role in silicide formation. It was observed that both the HfO$_2$/Si and ZrO$_2$/Si interfaces are stable in a wide temperature range and silicide may form at low temperatures, partially at the HfO$_2$/Si interface.

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