Phase Analysis of Thin Film Oxide Systems by AES and EELS

Details Phase Analysis of Thin Film Oxide Systems by AES and EELS Phase Analysis of Thin Film Oxide Systems by AES and EELS

1998-12-29

arxiv.org/abs/cond-mat/9812411v1

Physics

Condensed Matter

Materials Science

8 pages LaTex, 16 figures PostScript

Scientific paper

Auger electron spectroscopy (AES) and electron energy loss spectroscopy
(EELS) in a reflection mode are compared as the methods for phase composition
investigation of thin film oxide systems by ion profiling. As an example, the
Al/Al2O3/Si and YBa2Cu3O7/CeO2/Al2O3 systems are considered. The adaptation of
applied statistics methods for AES and EELS data treatment is discussed.

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