Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

Details Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

2008-12-31

arxiv.org/abs/0901.0085v1

Nucl.Instrum.Meth.A604:563-567,2009

Physics

Nuclear Physics

Nuclear Experiment

Scientific paper

10.1016/j.nima.2009.03.012

The performance of a Si PIN diode (type Hamamatsu S3590-06) as an energy sen- sitive detector operating at cryogenic temperatures (~10 K) and in magnetic fields up to 11 T was investigated, using a 207Bi conversion electron source. It was found that the detector still performs well under these conditions, with small changes in the response function being observed in high magnetic fields, e.g. a 30% to 50% decrease in energy resolution. A GEANT4 Monte Carlo simulation showed that the observed effects are mainly due to the modified trajectories of the electrons due to the influence of the magnetic field, which changes the scattering conditions, rather than to intrinsic changes of the performance of the detector itself.

Affiliated with

Also associated with

No associations

Rating

Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-536814