Performance limits of graphene-ribbon-based field effect transistors

Details Performance limits of graphene-ribbon-based field effect transistors Performance limits of graphene-ribbon-based field effect transistors

2007-07-03

arxiv.org/abs/0707.0375v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.77.045301

The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional carbon-nanotube-based transistors, reduces the importance of the specifics of the chemical bonding to the metallic electrodes in favor of the carbon-based part of device. The ultimate performance limits are here studied for various constriction and metal-ribbon contact models. In particular we show that, even for poorly contacting metals, properly taylored constrictions can give promising values for both the on-conductance and the subthreshold swing.

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