Performance Evaluation of Ballistic Silicon Nanowire Transistors with Atomic-basis Dispersion Relations

Details Performance Evaluation of Ballistic Silicon Nanowire Transistors with Atomic-basis Dispersion Relations Performance Evaluation of Ballistic Silicon Nanowire Transistors with Atomic-basis Dispersion Relations

2004-10-29

arxiv.org/abs/cond-mat/0410756v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 4 figures

Scientific paper

10.1063/1.1873055

In this letter, we explore the bandstructure effects on the performance of ballistic silicon nanowire transistors (SNWTs). The energy dispersion relations for silicon nanowires are evaluated with an sp3d5s* tight binding model. Based on the calculated dispersion relations, the ballistic currents for both n-type and p-type SNWTs are evaluated by using a semi-numerical ballistic model. For large diameter nanowires, we find that the ballistic p-SNWT delivers half the ON-current of a ballistic n-SNWT. For small diameters, however, the ON-current of the p-type SNWT approaches that of its n-type counterpart. Finally, the carrier injection velocity for SNWTs is compared with those for planar metal-oxide-semiconductor field-effect transistors, clearly demonstrating the impact of quantum confinement on the performance limits of SNWTs.

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