Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs

Details Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs

2008-07-10

arxiv.org/abs/0807.1678v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in IEEE Trans. on Electron Devices

Scientific paper

10.1109/TED.2008.928021

We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance, for both digital and THz applications. The impact of non-idealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single vacancy defect largely affect performance of both device types.

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