Percolative Effects on Noise in Pentacene Transistors

Details Percolative Effects on Noise in Pentacene Transistors Percolative Effects on Noise in Pentacene Transistors

2007-10-14

arxiv.org/abs/0710.2700v3

Appl. Phys. Lett. 91, 242110 (2007)

Physics

Condensed Matter

Materials Science

13 pages, 4 figures, Published

Scientific paper

10.1063/1.2823577

The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.

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