Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Details Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

2011-06-30

arxiv.org/abs/1106.6285v1

Appl. Phys. Lett. 99, 063109 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1063/1.3623479

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.

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