Pattern Competition in the Photorefractive Semiconductors

Details Pattern Competition in the Photorefractive Semiconductors Pattern Competition in the Photorefractive Semiconductors

2001-01-05

arxiv.org/abs/cond-mat/0101056v1

Physics

Condensed Matter

Soft Condensed Matter

Scientific paper

10.1143/JPSJ.70.3636

We analytically study the photorefractive Gunn effect in n-GaAs subjected to two external laser beams which form a moving interference pattern (MIP) in the semiconductor. When the intensity of the spatially independent part of the MIP, denoted by $I_0$, is small, the system has a periodic domain train (PDT), consistent with the results of linear stability analysis. When $I_0$ is large, the space-charge field induced by the MIP will compete with the PDT and result in complex dynamics, including driven chaos via quasiperiodic route.

Affiliated with

Also associated with

No associations

Rating

Pattern Competition in the Photorefractive Semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Pattern Competition in the Photorefractive Semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern Competition in the Photorefractive Semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-119949