Physics – Condensed Matter – Materials Science
Scientific paper
1998-05-25
Phys. Rev. Lett. 80, 3984 (1998)
Physics
Condensed Matter
Materials Science
5 pages, 4 figures
Scientific paper
10.1103/PhysRevLett.80.3984
Based on ab initio calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.
Arias Tomás A.
Csanyi Gabor
Ismail-Beigi Sohrab
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