Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

Details Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

1999-07-08

arxiv.org/abs/cond-mat/9907128v2

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevLett.84.4421

A magnetic field applied parallel to the two-dimensional hole system in the
GaAs/AlGaAs heterostructure, which is metallic in the absence of an external
magnetic field, can drive the system into insulating at a finite field through
a well defined transition. The value of resistivity at the transition is found
to depend strongly on density.

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