Parallel electron-hole bilayer conductivity from electronic interface reconstruction

Details Parallel electron-hole bilayer conductivity from electronic interface reconstruction Parallel electron-hole bilayer conductivity from electronic interface reconstruction

2009-12-23

arxiv.org/abs/0912.4671v3

Physics

Condensed Matter

Materials Science

Phys. Rev. Lett., in press

Scientific paper

The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

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