Physics – Condensed Matter – Disordered Systems and Neural Networks
Scientific paper
2002-03-21
Semiconductors 33, No 9 (September 1999) 978-980
Physics
Condensed Matter
Disordered Systems and Neural Networks
3 pages, 4 figures
Scientific paper
Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attributed to the interplay of the classical cyclotron motion and the EEI effect. The Hartree part of the interaction constant is estimated (F_/sigma = 0.44) and the WL and EEI contributions to the total quantum correction /Delta /sigma at B = 0 are separated (/Delta /sigma_{WL} ~ 0.3/Delta /sigma; /Delta /sigma_{EEI} ~ 0.7/Delta /sigma).
Arapov Yu. G.
Harus G. I.
Kuznetsov Oleg A.
Neverov V. N.
Shelushinina N. G.
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