Pair Tunneling in Semiconductor Quantum Dots

Details Pair Tunneling in Semiconductor Quantum Dots Pair Tunneling in Semiconductor Quantum Dots

1995-10-03

arxiv.org/abs/cond-mat/9510017v1

Physics

Condensed Matter

4 pages, 3 figures, uuencoded PostScript file

Scientific paper

10.1103/PhysRevLett.75.2879

We propose here a model for the pair tunneling states observed by Ashoori and co-workers (Phys. Rev. Lett. {\bf 68}, 3088 (1992)) in GaAs quantum dots. We show that while GaAs is a weakly-polar semiconductor, coupling to optical phonons is sufficiently strong to mediate a negative-U pairing state. The physical potential in which the two electrons are bound can be composed of a Si impurity and a parabolic well that originates from the potential created by the $\delta-$dopants in the backing layer of the dot. Such a pair state breaks up at moderate magnetic field strengths ($\approx$ 2 T), as is seen experimentally, and is unstable when the confining radius of the dot is smaller than $\approx 400$\AA.

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