P-Type Zno:. as Obtained by Ion Implantation of AS+ with Post-Implantation Annealing in Oxygen Radicals

Physics – Medical Physics

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Zinc oxide is the promising material for creation of the new generation of detectors for particle physics and radiation dosimetry. It has been shown that ion implantation of arsenic into zinc oxide film (arsenic is an acceptor impurity in ZnO) can result in formation of the p-type conductivity only in case of annealing in the flux of atomic oxygen. The ion implantation and the following annealing had influenced not only electrical properties of ZnO:As+ layers, but also their photoluminescence spectra. The ultraviolet luminescence band with the maximum at 3.33. eV corresponding to the AsO acceptor center had been clearly observed in the spectra of ZnO films implanted by As+ ions. The optimal temperature range of annealing in the atomic oxygen flux, required for obtaining of p-type conductivity in ZnO films, had been determined.

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