p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition

Details p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition

2005-02-05

arxiv.org/abs/cond-mat/0502150v1

Physics

Condensed Matter

Materials Science

Presented at the Society of Vacuum Coaters (SVC) 47th Annual Technical Conference (April 2004), and published in its proceedin

Scientific paper

Thin p-type Sb-doped ZnO films were grown by filtered vacuum arc deposition (FVAD), on untreated glass samples. The arc cathode was prepared by dissolving Sb into molten Zn. The deposition was performed with 200 A arc current, running for 120-240 s in 0.426 Pa oxygen pressure. The film thickness was 330-500 nm. The aotmic concentration of Sb in the films was ~1.5%, whereas the O/Zn atomic concentration ratio was ~0.7. Sb incorporation into the polycrystalline ZnO matrix was concluded from XRD analysis. The film resistivity (0.15-0.3 Ohm*m), carrier density (~10^22 m^(-3)), and carrier type, were determined by Hall effect measurements. The carrier mobility in the p-type films was in the range (10-20)*10^(-4) m^2/V*s. The energy gap of doped films, determined from optical tranmittance measurements, was approximately 3.39 eV.

Affiliated with

Also associated with

No associations

Rating

p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-436842