p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells

Details p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells

2002-07-10

arxiv.org/abs/cond-mat/0207259v2

Appl. Phys. Letters 82, 1875 (2003)

Physics

Condensed Matter

Materials Science

4 figures

Scientific paper

10.1063/1.1560873

We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.

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