P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Details P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

2003-11-21

arxiv.org/abs/cond-mat/0311504v1

Semiconductor Science and Technology 19, L13-16 (2004)

Physics

Condensed Matter

Materials Science

7 pages, 3 figures

Scientific paper

10.1088/0268-1242/19/3/L02

Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentrations of x<0.1. P-type conductivity for the cubic Ga1-xMnxN layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends non-linearly on the Mn incorporation and varies from 3x10^16 to 5x10^18 cm-3.

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