p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors

Details p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors

Sep 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5957..212t&link_type=abstract

Integrated Optics: Theory and Applications. Edited by Pustelny, Tadeusz; Lambeck, Paul V.; Gorecki, Christophe. Proceedings of

Physics

Optics

1

Scientific paper

The performance of p+-InAsSbP/n-InAs infrared (IR) photodiodes prepared by liquid phase epitaxy technique (LPE) is investigated. The current-voltage and capacitance-voltage characteristics, photoresponse and noise spectra are investigated in the temperature range 77-300 K. The trap-assisted current is calculated and compared with experimental data. It is found that at near-room temperatures and small reverse biases U ≤ 0.2 V experimental I-U characteristics are determined by diffusion and generation-recombination mechanisms. The trap-assisted tunnelling is shown to be dominant at higher reverse biases. The heterojunction photodiodes have superior photoresponse spectra in comparison with homojunction photodiodes and high threshold parameters.

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