Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

Details Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

2009-01-29

arxiv.org/abs/0901.4651v1

Applied Physics Letters 93, 162507 (2008)

Physics

Condensed Matter

Strongly Correlated Electrons

Published in Applied Physics Letters

Scientific paper

10.1063/1.3006325

Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and YSZ(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies.

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