Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance

Details Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance

2008-07-18

arxiv.org/abs/0807.3001v1

Phys. Rev. B 78, 035334 (2008)

Physics

Condensed Matter

Materials Science

13 pages, 14 figures, to be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.78.035334

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the samples to ambient air. Photooxidation of pentacene is shown to lead to a peak of trap states centered at 0.28 eV from the mobility edge, with trap densities of the order of 10(18) cm(-3). These trap states need to be occupied at first and cause a reduction in the number of free carriers, i.e. a consistent shift of the density of free holes as a function of gate voltage. Moreover, the exposure to oxygen reduces the mobility of the charge carriers above the mobility edge. We correlate the change of these transport parameters with the change of the essential device parameters, i.e. subthreshold performance and effective field-effect mobility. This study supports the assumption of a mobility edge for charge transport, and contributes to a detailed understanding of an important degradation mechanism of organic field-effect transistors. Deep traps in an organic field-effect transistor reduce the effective field-effect mobility by reducing the number of free carriers and their mobility above the mobility edge.

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