Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

Details Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

2010-09-16

arxiv.org/abs/1009.3109v1

Appl. Phys. Lett. 97, 152102 (2010) (3 pages)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, submitted for Applied Physics Letters

Scientific paper

10.1063/1.3501136

We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.

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