Out of plane screening and dipolar interactions in heterostructures

Details Out of plane screening and dipolar interactions in heterostructures Out of plane screening and dipolar interactions in heterostructures

2010-02-15

arxiv.org/abs/1002.2825v1

Physics

Condensed Matter

Materials Science

8 pages, 5 figures

Scientific paper

Out-of-plane screening (OPS) is expected to occur generally in metal-semiconductor interfaces but this aspect has been overlooked in previous studies. In this paper we study the effect of OPS in electron-hole bilayer (EHBL) systems. The validity of the dipolar interaction induced by OPS is justified with a RPA calculation. Effect of OPS in electron-hole liquid with close-by screening layers is studied. We find that OPS affects the electronic properties in low density and long wavelength regime. The corresponding zero-temperature phase diagram is obtained within a mean field treatment. We argue that our result is in general relevant to other heterostrucutures. The case of strongly correlated EHBL is also discussed.

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