Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

Details Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

2001-07-10

arxiv.org/abs/cond-mat/0107197v2

Physics

Condensed Matter

4 pages, 6 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.65.115209

Ballistic spin polarized transport through diluted magnetic semiconductor (DMS) single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field are varied. An interesting beat pattern in the TMR and spin polarization is found for different NMS/DMS double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are splitted by the s-d exchange interaction.

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