Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

Details Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111) Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

2010-05-12

arxiv.org/abs/1005.2099v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

17 pages, 4 figures

Scientific paper

Transport characteristics of single crystal bismuth films on Si(111)-7 \times 7 are found to be metallic or insulating at temperature below or above TC, respectively. The transition temperature TC decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behavior results from the states inside film, while the metallic behavior originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than TC. In addition, the metallic interface state is shown to result from the large SO-splitting at interfaces.

Affiliated with

Also associated with

No associations

Rating

Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-499741