Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots

Details Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots

2008-07-31

arxiv.org/abs/0807.5056v1

Physics

Condensed Matter

Materials Science

5 pages, 4 figures. accepted at Physica Status Solidi

Scientific paper

10.1002/pssb.200844129

We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements. Using eight-band k.p modelling, we show that the built-in piezo- and pyroelectric fields within the QDs cause a sensitive dependence of the radiative lifetimes on the exact QD geometry and composition. Moreover, the radiative lifetimes also depend heavily on the composition of the direct surrounding of the QDs. A broad lifetime distribution occurs even for moderate variations of the QD structure. Thus, for unscreened fields a multi-exponential decay of the ensemble PL is generally expected in this material system.

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