Origin of Low-Frequency Negative Transconductance Dispersion in p-HEMT

Details Origin of Low-Frequency Negative Transconductance Dispersion in p-HEMT Origin of Low-Frequency Negative Transconductance Dispersion in p-HEMT

2005-03-28

arxiv.org/abs/cond-mat/0503640v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1088/0268-1242/20/8/024

Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic(CDLTS) studies of an AlGaAs/InGaAs pseudomorphic HEMT were carried out. The experimental results show the presence of defect states at the AlGaAs/InGaAs hetero-interface. A mobility degradation model was developed to explain the low frequency negative transconductance dispersion as well as the apparent hole-like peaks observed in the CDLTS spectra. This model incorporates a time dependent change in 2DEG mobility due to ionised impurity scattering by the remaining charge states at the adjoining AlGaAs/InGaAs hetero-interface.

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