Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping

Details Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping

2006-12-08

arxiv.org/abs/cond-mat/0612223v2

Phys. Rev. Lett. 98, 196802 (2007)

Physics

Condensed Matter

Materials Science

14 pages, 3 figures, 1 table; accepted for publication in Phys. Rev. Lett.

Scientific paper

10.1103/PhysRevLett.98.196802

As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

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