Orientational pinning of quantum Hall striped phase

Details Orientational pinning of quantum Hall striped phase Orientational pinning of quantum Hall striped phase

2000-06-14

arxiv.org/abs/cond-mat/0006226v1

Pis'ma v Zh. Eksp. Teor. Fiz. 71 (2000) 612-617 [JETP Letters 71 (2000) 422-425]

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, LaTeX

Scientific paper

In ultra-clean 2D electron systems on (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which can be related to the spontaneous formation of a charge density wave (``striped phase''). We address to the following unsolved problem: what is the reason for stripe pinning along the crystallographic direction [110]? It is shown that in a single heterojunction (001) III-V the effective mass of 2D electrons is anisotropic. This natural anisotropy is due to the reduced (C_{2v}) symmetry of the heterojunction and, even being weak (0.1 percent), can govern the stripe direction. A magnetic field parallel to the interface induces ``magnetic'' anisotropy of the effective mass. The competition of these two types of anisotropy provides quantitative description of the experiment.

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